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Machine Learning-Based Reconstruction for Resistive Silicon Sensors

Low-Gain Avalanche Diodes (LGADs) and AC-coupled Low-Gain Avalanche Diodes (AC-LGADs) are promising technologies for precision timing and four-dimensional tracking. In AC-LGADs, the AC pad is coupled to the resistive n$^{+}$ layer through a dielectric layer, while the gain layer…

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2026
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arxiv.org/abs/2607.11585ARXIV-DEFAULT
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Abstract

Low-Gain Avalanche Diodes (LGADs) and AC-coupled Low-Gain Avalanche Diodes (AC-LGADs) are promising technologies for precision timing and four-dimensional tracking. In AC-LGADs, the AC pad is coupled to the resistive n^{+} layer through a dielectric layer, while the gain layer remains unsegmented. This structure provides a 100% fill factor and enables good spatial resolution with a relaxed readout pitch. The same signal-sharing mechanism that makes interpolation possible complicates the readout: charge spreads across multiple pads, the useful information can approach the electronic-noise threshold, and matrix-inversion approaches can become computationally challenging and sensitive to off-diagonal noise. In this work, we study machine-learning-based reconstruction and compression for resistive silicon sensors. We use full-waveform information from correlated pads to regularise the reconstruction and extract spatial information beyond what is available from binary readouts or reduced-amplitude summaries. We first introduce recurrent neural network models based on LSTM layers, which provide a proof-of-concept implementation for full-waveform reconstruction and have been tested for FPGA deployment using \hls. We also study routes towards bandwidth reduction with waveform rasterisation and window-selection methods, and extend the approach beyond the first model to topology-agnostic transformer-based architectures that use pad coordinates as part of the input. These models are designed to support arbitrary pad counts and geometries, mitigate edge distortions, preserve approximately 10 μm position resolution for 500 μm\times500 μm pitched sensors, and guide future resistive-silicon sensor designs